Rad Hard 100V GaN Transistor from EPC Offers Lowest On-Resistance Solution on the Market for Demanding Space Applications
EPC announces the introduction of the EPC7018 radiation-hardened GaN FET. The EPC7018 is a 100V, 3.9mΩ, 345A Pulsed, rad-hard GaN FET in a small 13.9mm2 footprint. The EPC7018 has a total dose radiation rating greater than 1 Mrad and SEE immunity for LET of 85MeV/(mg/cm2). The EPC7018, along with the rest of the Rad Hard family, EPC7014, EPC7007, and EPC7019 are offered in a chip-scale package, the same as the commercial eGaN® FET and IC family. Packaged versions will be available from EPC Space.
With higher breakdown strength, lower gate charge, lower switching losses, better thermal conductivity, and very low on-resistance, power devices based on GaN significantly outperform silicon-based devices and enable higher switching frequencies resulting in higher power densities, higher efficiencies, and more compact and lighter weight circuitry for critical spaceborne missions. GaN devices also support higher total radiation levels and SEE LET levels than silicon solutions.
Applications benefiting from the performance and fast deployment of the EPC7018 include DC-DC power, motor drives, lidar, deep probes, and ion thrusters for space applications, satellites, and avionics.
"The EPC7018 offers designers a high power, an ultra-low on-resistance device enabling a new generation of power conversion and motor drives in space operating at higher frequencies, higher efficiencies, and greater power densities than ever achievable before", said Alex Lidow, CEO, and co-founder of EPC.
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