EPC Launches 40V Rad Hard GaN FETs That Set New Performance Standards for Demanding Space Applications
Efficient Power Conversion (EPC) expands its family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions with two new 40V devices rated at 62A and 250A to address critical spaceborne and other high-reliability applications.
EPC announces the introduction of two new 40V-rated radiation-hardened GaN FETs. EPC7001 is a 40V, 4mΩ, 250APulsed, rad-hard GaN FET in a small 7mm2 footprint. EPC7002 is a 40V, 14.5mΩ, 62APulsed, rad-hard GaN FET in a tiny 1.87mm2 footprint. Both devices have a total dose radiation rating greater than 1,000K-Rad (Si) and SEE immunity for LET of 83.7 MeV/mg/cm2 with VDS up to 100% of rated breakdown. These new devices, along with the rest of the Rad Hard family, are offered in a chip-scale package. Packaged versions are available from EPC Space.
EPC’s eGaN FETs and eGaN ICs offer a higher-performing alternative to conventional rad hard silicon devices for high reliability and space applications. EPC’s Rad hard devices are significantly smaller, have 40 times better electrical performance, and lower overall cost than rad hard silicon devices. Moreover, EPC’s rad-hard devices exhibit superior resistance to radiation, supporting higher total radiation levels and SEE LET levels compared to traditional silicon solutions.
Applications benefiting from the performance and fast deployment of these devices include DC-DC power converters, motor drives, lidar, deep probes, and ion thrusters for space applications. They are particularly well-suited for satellites operating in both Low Earth Orbit (LEO) and Geosynchronous Earth Orbit (GEO), as well as avionics systems.
“The Rad Hard product family provides unparalleled performance and reliability, coupled with significant space heritage for more efficient and robust systems covering a wide range of applications in harsh environments, such as space and other high-reliability military applications”, said Alex Lidow, CEO, and co-founder of EPC.
Availability
The EPC7001 and EPC7002 are available for engineering sampling now.
- +1 Like
- Add to Favorites
Recommend
- EPC Releases Lowest On-resistance Rad-hard eGaN FET EPC7019 for Demanding Space Applications, 20 Times Smaller
- GaN Transistors from EPC Bring Newest Rad Hard Technology to Demanding Space Applications
- Rad Hard GaN Transistors Offering Highest Density and Efficiency on the Market for Demanding Space Applications Available from EPC
- Sharge Selects GaN FETs EPC2218 from EPC for High-power USB PD Charger Retro 67 to Achieve the Most Efficient Power Conversion
- Sekorm Became an Authorized Distributor of EPC(Efficient Power Conversion), Which Brings GaN FET Products
- EPC Space Brings GaN to the Edge of the Atmospherem, and Rohm Hones In on GaN Miniaturization
- Ultra-Low On-Resistance Rad Hard 200V Transistor Now Available for Demanding Space Applications from EPC
- 65A ePower™ Chipset from Efficient Power Conversion (EPC) Redefines Power Conversion
This document is provided by Sekorm Platform for VIP exclusive service. The copyright is owned by Sekorm. Without authorization, any medias, websites or individual are not allowed to reprint. When authorizing the reprint, the link of www.sekorm.com must be indicated.
Integrated Circuits
Discrete Components
Connectors & Structural Components
Assembly UnitModules & Accessories
Power Supplies & Power Modules
Electronic Materials
Instrumentation & Test Kit
Electrical Tools & Materials
Mechatronics
Processing & Customization
