Enhancement-Mode Gallium Nitride Technology
●Disruptive solutions offer a path to new levels of end product differentiation...Gallium nitride is a disruptive solution!
●Advantages of GaN FETs and ICs vs. silicon in your power designs
■Faster switching speed
■ Smaller size
■ Higher efficiency
■ Lower cost
●GaN Enables New Capabilities
■Lower on resistance – lower conductance losses
■ Faster devices – less switching losses and no reverse recovery
■ Less capacitance – less losses when charging and discharging devices
■Less power needed to drive the circuit
■Smaller devices take up less space on the printed circuit board
■ Lower cost
●GaN is Easy To Use
■Works like an N-channel MOSFET only MUCH faster
■Integration – saves space, improves efficiency, simplifies design, AND lowers cost.
■Comprehensive design support – device models, application notes, demo boards, technical articles
●GaN is Cost Effective
■GaN on silicon – inexpensive substrate
■Built in existing CMOS fab – mature, low cost process
■Lowers system cost – smaller and fewer passive components
●GaN is Reliable
■Automotive (AEC-Q101) Qualified
▲Proven technology - Hundreds of billions of hours of field operation with performance unmatched by silicon power devices
▲ Secure supply chain
▲ GaN is inherently radiation tolerant
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