Design Higher Resolution Lidar Systems with New Automotive-Qualified GaN FET EPC2252 for Advanced Autonomy from EPC
EPC introduces the 80V, AEC-Q101-qualified EPC2252 GaN FET, offering designers significantly smaller and more efficient solutions than silicon MOSFETs for automotive-grade lidar, 48V–12V DC-DC conversion, and low inductance motor drives.
Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride (eGaN®) FETs and ICs expand the selection of automotive, off-the-shelf gallium nitride transistors with the introduction of the 80V, 11mΩ EPC2252 Automotive-Qualified GaN FET that delivers 75A pulsed current in a 1.5mmx1.5mm footprint. The EPC2252 offers power system designers significantly smaller and more efficient devices than silicon MOSFETs for automotive-grade lidar found in autonomous driving and other ADAS applications, 48V–12V DC-DC conversion, and low inductance motor drives.
Lower switching losses, lower conduction losses, zero reverse recovery losses, and lower drive power enable high-frequency designs at high efficiency. Combined with an extremely tiny footprint, these factors enable state-of-the-art power density.
The fast-switching speed of GaN, with sub-nanosecond transitions and the capability to generate high-current pulses in less than 3 ns, results in a longer range and higher resolution in lidar for autonomous driving, parking, and collision avoidance.
“The EPC2252 makes an ideal switch for automotive lidar, low inductance motors, and 48 V DC-DC conversions,” according to Alex Lidow, EPC’s co-founder and CEO. “EPC is committed to the automotive market with a growing family of devices that enable highly efficient, low-cost vehicle electrification and autonomous driving.”
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