GaN FETs and ICs for Solar Power Applications

2023-08-03
●GaN devices are being widely adopted for solar applications because they offer significant benefits for efficiency, size, weight, and long lifetime.
▲Solar applications need to guarantee:
■Long lifetime, greater than 20 years
■Excellent thermal behavior
■High power density to increase power in the same form factor or for integration with the panel
▲The trend for higher power density results in very expensive cooling systems and state-of-art silicon MOSFET solutions cannot longer meet the power density required. Therefore, the leading solar companies are adopting GaN.
▲String inverter HV DC AC GaN FETs are extremely small with very low switching losses. This allows higher switching frequency to increase power density, while still delivering higher efficiency vs. silicon MOSFET solutions to address thermal challenges and save cooling cost. The excellent reliability of GaN supports 25 years life.
▲EPC 100 V, 150 V, 170 V, and 200 V GaN devices are ideal for the primary stage of microinverters or separate MPPT/optimizers. EPC 200 V and 350 V devices can also be used in multilevel topology for Battery Energy Storage Systems or string inverters.

EPC

EPC2218EPC2071EPC2302EPC2204EPC2252EPC2619EPC2206UP1966EEPC2306EPC2088EPC2308EPC2305EPC2059EPC2207EPC2307EPC2215EPC2304EPC23101EPC23102EPC9179EPC90153EPC90122EPC90123EPC9097EPC90145EPC90146EPC90142EPC90148EPC90143EPC9098EPC90124EPC90150EPC9099EPC90140EPC90147EPC90133

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Part#

GaN FETsGaN ICsGaN transistorsGaN devicesDevelopment Board

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Solar Power ]Solar Optimizer ]Microinverters ]solar panel optimizer ]Energy Storage System ]solar applications ]

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Application note & Design Guide

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BGA;LGA;QFN

English Chinese Chinese and English Japanese

2023/1/25

AB022

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