New Automotive Qualified GaN FETs EPC2204A and EPC2218A for Vehicle Electronics and Advanced Autonomy from EPC
EL SEGUNDO, Calif. — November 2022 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride (eGaN®) FETs and ICs expand the selection of automotive, off-the-shelf gallium nitride transistors with the introduction of 80V, 6mΩ EPC2204A that delivers 125A pulsed current in a 2.5mmx1.5mm footprint and the 80V, 3.2 mΩ EPC2218A that delivers 231A pulsed current is a 3.5mmx1.95mm footprint, offering designers significantly smaller and more efficient devices than silicon MOSFETs for automotive DC-DC for 48V-12V conversion, infotainment, and lidar for autonomous driving.
The EPC2204A and EPC2218A are ideal for applications with demanding requirements for high power density including 48V – 12V bidirectional converters for mild hybrid cars, 24V – 48V DC-DC in cars and trucks, and for infotainment, lighting, and ADAS applications.
Lower gate charges (QGD), and zero reverse recovery losses allow high-frequency operation of 1 MHz and beyond. Combined with high efficiency in a super tiny footprint, these factors enable state-of-the-art power density.
As an example, for 2 kW – 4 kW 48 V-12 V converters, GaN devices allow five times the frequency of silicon MOSFET solutions. Also, with a quarter of the inductance, inductor size and losses are reduced allowing 40% higher current per phase and up to half of the phases for lower system cost and half of the size. Despite the smaller size, efficiency increases up to 98%, greater than 2% higher than MOSFET solutions.
For lower power DC-DC, such as those used for infotainment applications in the vehicle, GaN allows for operations at 2 MHz and above to avoid interference and enable the smallest solution size.
The fast-switching speed of GaN, with sub-nanosecond transitions and the capability to generate high current pulses in less than 3 ns, allows for a longer range and higher resolution in lidar for autonomous driving, parking, and collision avoidance.
“The EPC2204A and EPC2218A GaN FET make the ideal switches for automotive lidar and 48 V DC-DC. These 80 V devices improve performance and cost for high-efficiency vehicle electrification and advanced autonomy applications”, according to Alex Lidow, EPC’s co-founder and CEO. “EPC is committed to the automotive market with devices ranging from 15V – 100V shipping in volume and many more are planned for release.”
- 【Datasheet】EPC2204A – Automotive 80 V (D-S) Enhancement Mode Power Transistor eGaN® FET DATASHEET
- 【Datasheet】EPC2218A – Automotive 80 V (D-S) Enhancement Mode Power Transistor eGaN® FET DATASHEET
- 【Datasheet】EPC2218A – Automotive 80 V (D-S) Enhancement Mode Power Transistor
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