New Automotive Qualified GaN FETs EPC2204A and EPC2218A for Vehicle Electronics and Advanced Autonomy from EPC
EL SEGUNDO, Calif. — November 2022 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride (eGaN®) FETs and ICs expand the selection of automotive, off-the-shelf gallium nitride transistors with the introduction of 80V, 6mΩ EPC2204A that delivers 125A pulsed current in a 2.5mmx1.5mm footprint and the 80V, 3.2 mΩ EPC2218A that delivers 231A pulsed current is a 3.5mmx1.95mm footprint, offering designers significantly smaller and more efficient devices than silicon MOSFETs for automotive DC-DC for 48V-12V conversion, infotainment, and lidar for autonomous driving.
The EPC2204A and EPC2218A are ideal for applications with demanding requirements for high power density including 48V – 12V bidirectional converters for mild hybrid cars, 24V – 48V DC-DC in cars and trucks, and for infotainment, lighting, and ADAS applications.
Lower gate charges (QGD), and zero reverse recovery losses allow high-frequency operation of 1 MHz and beyond. Combined with high efficiency in a super tiny footprint, these factors enable state-of-the-art power density.
As an example, for 2 kW – 4 kW 48 V-12 V converters, GaN devices allow five times the frequency of silicon MOSFET solutions. Also, with a quarter of the inductance, inductor size and losses are reduced allowing 40% higher current per phase and up to half of the phases for lower system cost and half of the size. Despite the smaller size, efficiency increases up to 98%, greater than 2% higher than MOSFET solutions.
For lower power DC-DC, such as those used for infotainment applications in the vehicle, GaN allows for operations at 2 MHz and above to avoid interference and enable the smallest solution size.
The fast-switching speed of GaN, with sub-nanosecond transitions and the capability to generate high current pulses in less than 3 ns, allows for a longer range and higher resolution in lidar for autonomous driving, parking, and collision avoidance.
“The EPC2204A and EPC2218A GaN FET make the ideal switches for automotive lidar and 48 V DC-DC. These 80 V devices improve performance and cost for high-efficiency vehicle electrification and advanced autonomy applications”, according to Alex Lidow, EPC’s co-founder and CEO. “EPC is committed to the automotive market with devices ranging from 15V – 100V shipping in volume and many more are planned for release.”
- 【Datasheet】EPC2204A – Automotive 80 V (D-S) Enhancement Mode Power Transistor eGaN® FET DATASHEET
- 【Datasheet】EPC2218A – Automotive 80 V (D-S) Enhancement Mode Power Transistor eGaN® FET DATASHEET
- 【Datasheet】EPC2218A – Automotive 80 V (D-S) Enhancement Mode Power Transistor
- +1 Like
- Add to Favorites
Recommend
- Sharge Selects GaN FETs EPC2218 from EPC for High-power USB PD Charger Retro 67 to Achieve the Most Efficient Power Conversion
- Efficient Energy Technology’s SolMate Adopts EPC GaN, Doubling Efficiency and Extending Product Lifetime
- EPC GaN FETs Enable 75 - 231Ampere Laser Diode Control in Nanoseconds for Advanced Automotive Autonomy
- Design Higher Resolution Lidar Systems with New Automotive-Qualified GaN FET EPC2252 for Advanced Autonomy from EPC
- EPC GaN FETs Deliver Benchmark Power Density and Efficiency for DC/DC Conversion
- Richtek and EPC Collaborate to Create Small 140 Watt Fast-charging Solution
- EPC Introduces The 40 V, 1.6 Milliohm EPC2069 EGaN® FET, it Can Range From 500 W to 2 KW and Exceed 98% Efficiency
- Automotive AEC Q101 Qualified 65V eGaN FET EPC2219 Enables Higher Resolution for Lidar Systems
This document is provided by Sekorm Platform for VIP exclusive service. The copyright is owned by Sekorm. Without authorization, any medias, websites or individual are not allowed to reprint. When authorizing the reprint, the link of www.sekorm.com must be indicated.