EPC2218A and EPC2204A EPC eGaN® FET QUALIFICATION REPORT
■The testing matrix in this qualification report covers the qualification of EPC2218A and EPC2204A according to the component level AEC-Q101 Rev D1 requirements.
●Qualification Test Overview
■EPC's EPC2218A and EPC2204A eGaN FETs were subjected to a wide variety of stress tests following the specifications of AEC-Q101 (Rev D1) developed for silicon-based power MOSFETs. These tests include:
▲Preconditioning: Parts undergo the following steps in sequence: (1) 125°C bake for a minimum of 24 hours; (2) Moisture Sensitivity Level 1 (MSL1); (3) 3 times reflow.
▲Parametric Verification: Device parameters are measured at –40°C, 25°C, and 150°C to ensure compliance with datasheet limits over the entire temperature range.
▲Electrostatic Discharge (ESD) Characterization: Parts are tested under both Human Body Model (HBM) and Charged Device Model (CDM) to assess device susceptibility to electrostatic discharge events.
▲High temperature reverse bias (HTRB): Parts are subjected to a drain– source voltage at the maximum rated temperature and maximum rated voltage (80 V).
▲High temperature gate bias (HTGB): Parts are subjected to a gate–source voltage at the maximum rated temperature and maximum rated gate voltage (6 V).
▲Unbiased highly accelerated test (uHAST): Parts are soaked for 96 hours at 130°C, 85% humidity, and vapor pressure 33.3 psia.
▲Temperature cycling (TC): Parts are subjected to alternating high and low temperature extremes from –55°C to 175°C for a total of 400 cycles – High temperature high humidity reverse bias (H3TRB): Parts are subjected to 1000 hours of 85°C, 85% humidity with the drain biased at 100% of maximum rating.
▲Moisture sensitivity level 1 (MSL1): Parts are subjected to moisture, temperature, and three cycles of reflow. MSL1 is the most stringent of the moisture sensitivity levels, requiring 85°C and 85% humidity for 168 hours.
▲Intermittent Operating Life (IOL): Parts are temperature cycled with short period and device heating through internal electrical power dissipation.
▲Destructive Physical Analysis: Parts are delayered and physically analyzed looking for defects resulting from stress testing. All devices put on test as part of this qualification underwent external visual inspection prior to test. This microscope inspection checks for physical damage to the chip-scale package, such as edge chipping or cracks, that may have resulted from assembly or transit. Damaged parts are removed from the test population.
■For all qualification tests, the stability of the devices is verified with DC electrical tests before and after stress. In many cases, interim readouts are also performed. Electrical parameters are measured at room temperature. The parameters include: gate-source threshold voltage (VTH), on-state resistance RDS(on), off-state drain leakage (IDSS), and gate leakage ( IGSS). For VTH and RDS(on), a failure is recorded when either of the following occurs: (1) the measurement exceeds the datasheet specifications; or (2) the measurement has changed by more than 20% of its initial value. For IDSS and IGSS, a failure is recorded if the measurement exceeds datasheet limit, or if it has increased by more than 5x during test. All testing requirements and specifications for AEC-Q101 (Rev D1) were followed.
■For certain qualification tests, parts were mounted onto FR5 (high Tg FR4) PCB adaptor cards. These cards simplify the process of post-screening and electrically stressing the parts. Adaptor cards (1.6 mm in thickness) with two copper layers were used. The top copper layer was 1 oz. or 2 oz., and the bottom copper layer was 1 oz. Kester NXG1 type 3 SAC305 solder water soluble flux was used in mounting the part onto an adaptor card. After assembly, parts were flux-cleaned and subsequently subjected to oven bake at 125°C.
■For other qualifications tests, including MSL1 and TC, parts were not mounted to adaptor cards. Electrical tests were performed using sockets or probe needles touching the solder pads of the bare die.
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Test Report |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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2022/7/27 |
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269 KB |
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