EPC2088 EPC eGaN® FET Automotive Qualification Report
●Scope: The testing matrix in this qualification report covers the qualification of EPC2088, a wafer level chip scale package 100 V eGaN power transistor. For device level tests, EPC2088 is qualified by matrix with EPC2218 and EPC2302 that have identical voltage ratings and share the same device design and process. Similarly, for package related reliability tests, EPC2088 is qualified by matrix with EPC2218A and EPC2204A, where they utilize the same packaging technology platform.
●Qualification Test Overview
■EPC’s eGaN FETs were subjected to a wide variety of stress tests under conditions that are typical for silicon-based power MOSFETs. These tests included:
▲High temperature, reverse bias (HTRB): Parts are subjected to a drain-source voltage at the maximum rated temperature
▲High temperature, gate bias (HTGB): Parts are subjected to a gate-source voltage at the maximum rated temperature
▲High temperature storage (HTS): Parts are subjected to heat at the maximum rated temperature
▲Moisture sensitivity level 1 (MSL1): Parts are subjected to moisture, temperature, and three cycles of reflow. MSL1 is the most stringent of the moisture sensitivity levels, requiring 85°C and 85% humidity for 168 hours.
▲High temperature, high humidity, reverse bias (H3TRB): Parts are subjected to humidity under high temperature with a drain-source voltage applied
■The stability of the devices is verified with DC electrical tests after stress biasing. The electrical parameters are measured at time-zero and at interim readout points at room temperature. Electrical parameters such as the gate-source leakage, drain-source leakage, gate-source threshold voltage, and on-state resistance are compared against the data sheet specifications. A failure is recorded when a part exceeds the datasheet specifications. eGaN FETs are stressed to meet the latest Joint Electron Device Engineering Council (JEDEC) standards when possible.
■Parts for all tests except for TC were mounted onto high Tg FR4 adaptor cards. Adaptor cards of 1.6 mm in thickness with two copper layers were used. The top copper layer was 1 oz. or 2 oz., and the bottom copper layer was 1 oz.
|
|
|
|
|
|
|
Test Report |
|
|
|
|
Please see the document for details |
|
|
|
|
|
|
|
|
QFN |
|
|
English Chinese Chinese and English Japanese |
|
|
2022/12/22 |
|
|
|
|
|
|
|
|
241 KB |
- +1 Like
- Add to Favorites
Recommend
- Sharge Selects GaN FETs EPC2218 from EPC for High-power USB PD Charger Retro 67 to Achieve the Most Efficient Power Conversion
- EPC Introduces The 40 V, 1.6 Milliohm EPC2069 EGaN® FET, it Can Range From 500 W to 2 KW and Exceed 98% Efficiency
- EPC GaN FETs Deliver Benchmark Power Density and Efficiency for DC/DC Conversion
- EPC Announces a New 3-phase BLDC Motor Drive Inverter Using the EPC2065 EGaN® FET
- EPC Launches 40V EPC2055 eGaN FET Ideal for High Power Density Solutions for USB-C Battery Chargers and Ultra-thin Point-of-Load Converters
- New Automotive Qualified GaN FETs EPC2204A and EPC2218A for Vehicle Electronics and Advanced Autonomy from EPC
- Efficient Power Conversion (EPC) Expands 100 V eGaN FET Family Offering Designers Best-in-Class Performance and Cost for 48 V DC-DC Conversion
- Design Higher Resolution Lidar Systems with New Automotive-Qualified GaN FET EPC2252 for Advanced Autonomy from EPC
All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.
Integrated Circuits
Discrete Components
Connectors & Structural Components
Assembly UnitModules & Accessories
Power Supplies & Power Modules
Electronic Materials
Instrumentation & Test Kit
Electrical Tools & Materials
Mechatronics
Processing & Customization
