Efficient Power Conversion (EPC) Expands 100 V eGaN FET Family Offering Designers Best-in-Class Performance and Cost for 48 V DC-DC Conversion

PublishTime： 2020-07-07 Article Source：EPC

EPC introduces 100 V, 3.8 milliohm EPC2053 eGaN® FET, joining the EPC2045, EPC2052, and EPC2051 to offer a comprehensive 100 V family of GaN transistors that are more efficient, smaller, and lower cost for high performance 48 V DC-DC conversion.

EL SEGUNDO, Calif. — April 2019 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs advances the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of the EPC2053 (3.8 mΩ, 100 V) eGaN FET.

This device joins the EPC2045 (7 mΩ, 100 V), EPC2052 (13.5 mΩ, 100 V) and EPC2051 (25 mΩ, 100 V) to offer designers a comprehensive family of 100 V products suitable for a wide-range of power levels and price points to meet the increasing demands of 48 V server, 48 V automotive, and 54 V data center applications. Other applications for the 100 V family include single-stage 48 V to load open rack server architectures, USB-C, precision motor drives, LED lighting, and lidar.

100 V eGaN FET family for best-in-class 48 V DC-DC

This latest generation of 100 V GaN devices increase the efficiency, shrink the size, and reduce system cost for 48 V power conversion.

According to Alex Lidow, EPC’s co-founder and CEO, “There are very significant performance advantages gained from GaN in 48 VIN conversion and this is a market where growth is exploding for multiple applications, such as Artificial Intelligence (AI), cloud computing, and advanced high-performance motor drives. In addition, automotive systems are moving from 12 V distribution systems to 48 V systems to support the emergence of autonomous vehicles with lidar, radar, camera, and ultrasonic sensors. Our new family of 100 V products demonstrate that in all 48 V topologies, the highest efficiency and lowest cost is achieved with GaN FETs and ICs.”

48 V = GaN

In all the topologies with 48 VIN, the highest efficiency is obtained using GaN devices due to their lower capacitance and smaller size. With recent pricing decreases in GaN power transistors, the cost comparison with equivalent silicon-based converters now strongly favors the use of GaN devices in all leading-edge solutions.

Achieving as high as 97% efficiency, two new reference designs and five demonstration boards are offered to showcase the high performance of these latest generation 100 V eGaN FETs.

The EPC9138 demonstration board is a 400 kHz switching frequency, 48 VIN, 15 A output current, buck converter featuring the 100 V EPC2053. The EPC9141 demonstration board is a 400 kHz switching frequency, 48 VIN, 10 A output current, buck converter featuring the 100 V EPC2045.

Both the EPC9138 and EPC9141 beat the best silicon-based solutions in power density and offer exceptional performance, small size, and low cost.

Also offered are standard half-bridge development boards available to support easy in-circuit performance evaluation of each of the 100 V family devices. The EPC9093 supports the EPC2053, the EPC9078 and EPC9205 support the EPC2045, the EPC9092 supports the EPC2052 and the EPC9091 supports the EPC2051.

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