Enhancement-Mode Gallium Nitride Technology
2022-03-14
●Introduction:
■Disruptive solutions offer a path to new levels of end product differentiation...Gallium nitride is a disruptive solution!
●Advantages of GaN FETs and ICs vs. silicon in your power designs:
■Faster switching speed
■Smaller size
■Higher efficiency
■Lower cost
■Disruptive solutions offer a path to new levels of end product differentiation...Gallium nitride is a disruptive solution!
●Advantages of GaN FETs and ICs vs. silicon in your power designs:
■Faster switching speed
■Smaller size
■Higher efficiency
■Lower cost
- +1 Like
- Add to Favorites
Recommend
More>
- Sharge Selects GaN FETs EPC2218 from EPC for High-power USB PD Charger Retro 67 to Achieve the Most Efficient Power Conversion
- New 40V GaN Power Transistor EPC2366 from EPC Targets Low-Voltage Silicon Strongholds
- Making a Fast, Efficient, Small 350V Half Bridge Module with EPC‘s eGaN FETs
- Sekorm Became an Authorized Distributor of EPC(Efficient Power Conversion), Which Brings GaN FET Products
- EPC‘s ePower Stage EPC2152 Integrated Circuit Named Finalist in Prestigious Elektra Awards
- BRC Solar Selects EPC 100V eGaN FETs for Next Generation Solar Optimizer
- EPC Expands High-Performance eGaN FET Product Family with Latest 80 V and 200 V Offerings
- EPC and BrightLoop Converters Produce Smaller, Lighter Converters for Performance eMotorsport Vehicles
All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.