EPC Launches 40V EPC2055 eGaN FET Ideal for High Power Density Solutions for USB-C Battery Chargers and Ultra-thin Point-of-Load Converters
December 2020 — Efficient Power Conversion (EPC) Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, advances the performance capability of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2055 (3mΩ, 40V) eGaN FET.
This device is ideal for applications with demanding requirements for performance in space-constrained form factors including USB-C batter chargers and ultra-thin point-of-load (POL) converters. Other low-voltage applications benefiting from the fast-switching speeds and ultra-high efficiency of the EPC2055 include LED lighting, 12V – 24V input motor drivers, and lidar systems for robotics, drones, and autonomous cars.
According to Alex Lidow, EPC’s co-founder and CEO, “The EPC2055 is a very good example of the rapid evolution of GaN FET technology. This 40 volt device offers both smaller size and reduced parasitics compared with previous-generation 40V GaN FETs and at lower cost; thus, offering designers both improved performance and cost savings.”
The EPC90132 development board is a 40V maximum device voltage, 25A maximum output current, half bridge with onboard gate drives, featuring the EPC2055 eGaN FETs. This 2”×2”(50.8mm×50.8mm) board is designed for optimal switching performance and contains all critical components for easy evaluation of the EPC2055.
- 【Datasheet】Enhancement-Mode Gallium Nitride Technology
- 【Datasheet】Enhancement-Mode Gallium Nitride Technology
- 【Datasheet】Enhancement-Mode Gallium Nitride Technology
- 【Datasheet】EPC2055 – Enhancement Mode Power Transistor DATASHEET
- 【Datasheet】EPC2055 – Enhancement Mode Power Transistor
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