EPC2055 – Enhancement Mode Power Transistor DATASHEET

2022-08-27
Gallium Nitride's exceptionally high electron mobility and low temperature coefficient allows very low R-DS(on), while its lateral device structure and majority carrier diode provide exceptionally low Q-G and zero Q-RR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.
EPC2055 eGaN® FETs are supplied only in passivated die form with solder bars. Die Size: 2.5 mm x 1.5 mm
■Benefits
●Ultra High Efficiency
●No Reverse Recovery
●Ultra Low Q-G
●Small Footprint

EPC

EPC2055

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Part#

Enhancement Mode Power TransistoreGaN® FETs

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DC-DC Converters ]Isolated DC-DC Converter ]Sync rectification ]High frequency (2 MHz) Ultra-thin Point of Load Converters ]Lidar ]USB-C Battery Chargers ]LED Lighting ]12V-24V Input Motor ]Drivers ]

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Datasheet

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July 2022

1.3 MB

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