Enhancement-Mode Gallium Nitride Technology

2022-08-08
A GaN transistor is a wide bandgap device with superior conductivity compared to traditional silicon transistors resulting in smaller devices and lower capacitance for the same RDS(on).
Enhancement-mode (normally-off) operation allows power designers to take advantage of the performance benefits of gallium nitride in a switching application.
Capacitance and inductance impede switching speed. eGaN FETs' small size and lateral structure give ultra low capacitance while the chip-scale packaging gives low inductance enabling unprecedented switching performance in terms of speed, voltage overshoot and ringing. Zero QRR also reduces losses at high frequency.
The switching performance of eGaN FETs and ICs enables higher power density, higher frequency, higher switching precision, higher bus voltage, and less voltage overhead. The technology can be scaled over many power and voltage levels.

EPC

EPC2040EPC2216EPC2111EPC2100EPC2023EPC8004EPC2014CEPC2015CEPC2055EPC2030EPC2069EPC2067EPC7019EPC2024EPC2066EPC7014EPC2108EPC2035EPC2102EPC2031EPC2101EPC2020EPC2219EPC8002EPC8009EPC2203EPC2039EPC2214EPC2202EPC2103EPC2065EPC2029EPC2105EPC2021EPC2206UP1966EEPC2038EPC2037EPC2107EPC8010EPC2036EPC2106EPC2221EPC2007CEPC2051EPC2016CEPC2212EPC2052EPC2045EPC2001CEPC7004EPC2104EPC2204EPC2032EPC7018EPC2053EPC2218EPC2022EPC2071EPC2302EPC2110EPC2033EPC2059EPC2012CEPC2019EPC2054EPC2010CEPC7007EPC2207EPC2034EPC2215EPC2034CEPC2050EPC2152EPC23101EPC21601EPC21603EPC9171EPC9162EPC9157EPC9143EPC9151EPC9163EPC9165EPC9170EPC9137EPC9148EPC9153EPC9166EPC9160EPC9115EPC9144EPC9154EPC9156EPC9126EPC9126HCEPC9150EPC9127EPC9128EPC9129EPC9121EPC9111EPC9112EPC950xEPC9513EPC9515EPC9514EPC9146EPC9167EPC9167HCEPC9173EPC9086EPC9036EPC9031EPC9024EPC9005CEPC9001CEPC90132EPC9060EPC90139EPC90138EPC9032EPC90149EPC9064EPC9049EPC9038EPC9061EPC9037EPC9033EPC9022EPC9029EPC9057EPC9039EPC90137EPC9046EPC9041EPC9034EPC90122EPC90123EPC9507EPC9063EPC9030EPC9050EPC9055EPC9006CEPC9091EPC9010CEPC9092EPC9078EPC9002CEPC9040EPC9097EPC9062EPC9093EPC9035EPC90146EPC90142EPC9058EPC9047EPC9098EPC9004CEPC9014EPC9094EPC9003CEPC90124EPC9048EPC9099EPC9048CEPC90121EPC90120

More

Part#

GaN transistorEvaluation Module1/16th Brick Evaluation ModuleBidirectional 1/16th Brick Evaluation ModuleBidirectional Power ModulePower ModuleUltra-thin, Multi-level ConverterHigh Efficiency, Thin Buck ConverterInput Boost ConverterDual Output Synchronous Buck Converter1/8th Brick ConverterLaser Diode Driver Demo BoardWireless Demo KitWirelesss Demo Kit Wireless PowerMulti-Mode Wireless Power KitAmplifier BoardWireless Receive DevicesMotor Drive Demo3-Phase BLDC Motor Drive Reference Design BoardeGaN FETseGaN ICsEnhancement-Mode Gallium Nitride (eGaN®) TransistorsIntegrated Circuits

More

Automotive ]DC-DC Converter ]POL Converter ]Lidar ]Class-D Audio ]Wireless Power ]Envelope Tracking ]RF Amplifier ]Motor Drive ]Medical ]LED Lighting ]

More

Datasheet

More

More

Please see the document for details

More

More

BGA;LGA;QFN

English Chinese Chinese and English Japanese

2022/7/2

TB001

1.5 MB

- The full preview is over. If you want to read the whole 6 page document,please Sign in/Register -
  • +1 Like
  • Add to Favorites

Recommend

All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.

Contact Us

Email: