EPC2040 – Enhancement Mode Power Transistor
Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.
Benefits:
• Ultra High Efficiency
• Ultra Low RDS(on)
• Ultra Low QG
• Ultra Small Footprint
[ High Speed DC-DC conversion ][ Lidar Applications ][ Pulsed Power Applications ][ Lidar for Augmented Reality Applications ] |
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Datasheet |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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May, 2020 |
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1.6 MB |
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