EPC2218A – Automotive 80 V (D-S) Enhancement Mode Power Transistor

2023-06-29
●Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.
●Benefits:
■Ultra High Efficiency
■No Reverse Recovery
■Ultra Low QG
■Small Footprint

EPC

EPC2218AEPC90123EPC2218

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Part#

Automotive 80 V (D-S) Enhancement Mode Power TransistorEnhancement Mode Power TransistorGaN transistorspower MOSFETsHalf-Bridge Development BoardeGaN® FET

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DC-DC Converters ]BLDC Motor Drives ]Sync Rectification ]AC/DC ]DC-DC ]Point of Load Converters ]USB-C ]Automotive Lidar ]ToF ]Class D Audio ]LED Lighting ]eMobility ]

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Datasheet

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May, 2023

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