Automotive AEC Q101 Qualified 65V eGaN FET EPC2219 Enables Higher Resolution for Lidar Systems
March 2021 — EPC announces successful AEC Q101 qualification of the 65V EPC2219 designed for lidar systems in the automotive industry and other harsh environments.
eGaN technology has been in mass production for more than a decade, accumulating billions of hours of successful field experience in automotive applications, such as lidar (Light Detection and Ranging) and radar for autonomous vehicles, 48V – 12V DC-DC converters for mild hybrid power, ultra-high fidelity infotainment systems, and high-intensity headlamps for trucks.
This EPC2219 has completed rigorous automotive AEC Q101 qualification testing including humidity testing with bias (H3TRB), high temperature reverse bias (HTRB), high temperature gate bias (HTGB), temperature cycling (TC), as well as several other tests. This GaN device will be followed with several more discrete transistors and integrated circuits designed for the harsh automotive environment.
In addition to lidar in demanding automotive applications, the EPC2219, a 65V, 3.3Ω, eGaN FET with integrated reverse gate clamp diode and tiny 0.81mm² footprint is perfectly suited for driving GaN FETs in radar and ultrasonic sensors, satellite reaction wheels, high frequency DC-DC conversion, wireless power, and class-D audio.
To complete AEC Q101 testing, EPC's eGaN FETs undergo rigorous environmental and bias-stress testing. Of note is that EPC's wafer level chip-scale (WLCS) packaging pass all the same testing standards created for conventional packaged parts, demonstrating that the superior performance of chip-scale packaging does not compromise ruggedness or reliability. eGaN devices passing AEC Q101 testing are produced in facilities certified to the Automotive Quality Management System Standard IATF 16949.
EPC's CEO and co-founder Alex Lidow notes, “This new automotive product is the latest addition to a growing family of EPC transistors and integrated circuits designed to enable autonomous driving and improve fuel economy and safety.”
- 【Datasheet】EPC2219 – Enhancement Mode Power Transistor with Integrated Reverse Gate Clamp Diode
- 【Datasheet】Enhancement-Mode Gallium Nitride Technology
- 【Datasheet】Enhancement-Mode Gallium Nitride Technology
- 【Datasheet】Enhancement-Mode Gallium Nitride Technology
- +1 Like
- Add to Favorites
Recommend
- Sharge Selects GaN FETs EPC2218 from EPC for High-power USB PD Charger Retro 67 to Achieve the Most Efficient Power Conversion
- New Automotive Qualified GaN FETs EPC2204A and EPC2218A for Vehicle Electronics and Advanced Autonomy from EPC
- Design Higher Resolution Lidar Systems with New Automotive-Qualified GaN FET EPC2252 for Advanced Autonomy from EPC
- EPC Introduces The 40 V, 1.6 Milliohm EPC2069 EGaN® FET, it Can Range From 500 W to 2 KW and Exceed 98% Efficiency
- EPC Introduces EPC9157 48V to 12V Demo Board Featuring EPC eGaN FETs and New Renesas DC-DC Controller
- EPC Announces a New 3-phase BLDC Motor Drive Inverter Using the EPC2065 EGaN® FET
- EPC Launches 40V EPC2055 eGaN FET Ideal for High Power Density Solutions for USB-C Battery Chargers and Ultra-thin Point-of-Load Converters
- BRC Solar Selects EPC 100V eGaN FETs for Next Generation Solar Optimizer
This document is provided by Sekorm Platform for VIP exclusive service. The copyright is owned by Sekorm. Without authorization, any medias, websites or individual are not allowed to reprint. When authorizing the reprint, the link of www.sekorm.com must be indicated.
Integrated Circuits
Discrete Components
Connectors & Structural Components
Assembly UnitModules & Accessories
Power Supplies & Power Modules
Electronic Materials
Instrumentation & Test Kit
Electrical Tools & Materials
Mechatronics
Processing & Customization
