EPC2219 – Enhancement Mode Power Transistor with Integrated Reverse Gate Clamp Diode

2021-04-20
EPC2219 eGaN® FETs are supplied only inpassivated die form with solder bumps.
Die size: 0.9 mm x 0.9 mm.
●Applications:
■Lidar/Pulsed Power Applications
■High Speed Gate Driving
■Wireless Power Transfer
■Synchronous bootstrap
■Class-D Audio
●Benefits:
■Ultra High Efficiency
■Ultra Low Q-G
■Ultra Small Footprint

EPC

EPC2219

More

Part#

Enhancement Mode Power TransistoreGaN® FETs

More

Lidar Applications ]Pulsed Power Applications ]High Speed Gate Driving ]Wireless Power Transfer ]Synchronous bootstrap ]Class-D Audio ]

More

Datasheet

More

More

Please see the document for details

More

More

English Chinese Chinese and English Japanese

February, 2021

1.4 MB

- The full preview is over. If you want to read the whole 6 page document,please Sign in/Register -
  • +1 Like
  • Add to Favorites

Recommend

All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.

Contact Us

Email: