EPC7014 – Rad Hard Power Transistor Preliminary Data Sheet
■EPC7014 eGaN® FETs are supplied only in passivated die form with solder bumps.
■Die size: 0.9 mm x 0.9 mm
●Applications:
■Commercial satellite EPS & avionics
■Deep space probes
■High frequency Rad Hard DC-DC conversion
■Rad Hard motor drives
●Features:
■Ultra high efficiency
■Ultra low QG
■Ultra small footprint
■Light weight
■Total dose
▲Rated > 1 Mrad
■Single event
▲SEE immunity for LET of 85 MeV/(mg/cm2) with VDS up to 100% of rated breakdown
■Neutron
▲Maintains Pre-Rad specification for up to 3 x 1015 Neutrons/cm2
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Rad Hard Power Transistor 、 Rad Hard eGaN® transistor 、 GaN transistors 、 eGaN® FET |
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[ Commercial satellite EPS & avionics ][ Deep space probes ][ High frequency Rad Hard DC-DC conversion ][ Rad Hard motor drive ] |
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Datasheet |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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January, 2022 |
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1.2 MB |
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