EPC7014 – Rad Hard Power Transistor PRELIMINARY DATASHEET

2021-11-15
●EPC7014 eGaN® FETs are supplied only in passivated die form with solder bumps.
●Die size: 0.9 mm x 0.9 mm
●Features
■Ultra high efficiency
■Ultra low Q-G
■Ultra small footprint
■Light weight
■Total dose
▲Rated > 1 Mrad
■Single event
▲SEE immunity for LET of 85 MeV/(mg/cm²) with V-DS up to 100% of rated breakdow
■Neutron
▲Maintains Pre-Rad specification for up to 3 x10¹⁵ Neutrons/cm²

EPC

EPC7014

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Part#

eGaN® FETsRad Hard Power TransistorRad Hard eGaN® transistors

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Commercial satellite EPS ]avionics ]Deep space probes ]High frequency Rad Hard DC-DC conversion ]Rad Hard motor drives ]

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Datasheet

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October, 2021

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