EPC7014-Rad Hard Power Transistor eGaN® FET DATASHEET
●Die size: 0.9 mm x 0.9 mm
●Applications：
■Commercial satellite EPS & avionics
■Deep space probes
■High frequency Rad Hard DC-DC conversion
■Rad Hard motor drives
●Features:
■Ultra high efficiency
■Ultra low Q-G
■Ultra small footprint
■Lightweight
■Total dose
▲Rated > 1 Mrad
■Single event
▲SEE immunity for LET of 85 MeV/(mg/cm²) with V-DS up to 100% of rated breakdown
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Rad Hard Power Transistor 、 Rad Hard eGaN® transistors 、 eGaN® FETs |
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[ Commercial satellite EPS & avionics ][ Deep space probes ][ High frequency Rad Hard DC-DC conversion ][ Rad Hard motor drives ] |
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Datasheet |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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May, 2021 |
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1.3 MB |
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