EPC7014 – Rad Hard Power Transistor

2021-08-09
EPC7014 eGaN® FETs are supplied only inpassivated die form with solder bumps. Die size: 0.9 mm x 0.9 mm
■Features
●Ultra high efficiency
●Ultra low QG
●Ultra small footprint
●Light weight
●Total dose
▲Rated > 1 Mrad
●Single event
▲SEE immunity for LET of 85 MeV/(mg/cm2) with VDS up to 100% of rated breakdown
●Neutron
▲Maintains Pre-Rad specification for up to 3 x 1015 Neutrons/cm2

EPC

EPC7014

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Part#

Rad Hard Power TransistoreGaN® FETs

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Commercial satellite EPS & avionics ]Deep space probes ]High frequency Rad Hard DC-DC conversion ]Rad Hard motor drives ]

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Datasheet

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July, 2021

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