EPC7019 – Rad Hard Power Transistor
These devices have exceptionally high electron mobility and a low temperature coefficient resulting in very low RDS(on) values. The lateral structure of the die provides for very low gate charge (QG) and extremely fast switching times. These features enable faster power supply switching frequencies resulting in higher power densities, higher efficiencies and more compact designs.
EPC7019 eGaN® FETs are supplied only inpassivated die form with solder bars.
Die size: 6.05 x 2.3 mm
■Features
●Ultra high efficiency
●Ultra low QG
●Ultra small footprint
●Light weight
●Total dose
▲Rated > 1 Mrad
●Single event
▲SEE immunity for LET of 85 MeV/(mg/cm2) with VDS up to 100% of rated breakdown
●Neutron
▲Maintains Pre-Rad specification forup to 3 x 10^15Neutrons/cm²
■Benefits
●Superior radiation and electrical performance vs. rad hard MOSFETs: smaller, lighter, and greater radiation hardness
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[ Commercial satellite EPS & avionics ][ Deep space probes ][ High frequency Rad Hard DC-DC conversion ][ Rad Hard motor drives ] |
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Datasheet |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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June, 2022 |
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1.3 MB |
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