EPC7019 – Rad Hard Power Transistor
●These devices have exceptionally high electron mobility and a low temperature coefficient resulting in very low R-DS(on) values. The lateral structure of the die provides for very low gate charge (Q-G) and extremely fast switching times. These features enable faster power supply switching frequencies resulting in higher power densities, higher efficiencies and more compact designs.
●EPC7019 eGaN® FETs are supplied only in passivated die form with solder bumps. Die size: 6.05 mm x 2.3 mm
■Features:
●Ultra high efficiency
●Ultra low Q-G
●Ultra small footprint
●Light weight
●Total dose
◆Rated > 1 Mrad
●Single event
◆SEE immunity for LET of 85 MeV/(mg/cm²) with V-DS up to 100% of rated breakdow
●Neutron
◆Maintains Pre-Rad specification for
up to 3 x 10¹⁵ Neutrons/cm²
[ Commercial satellite EPS ][ avionics ][ Deep space probes ][ High frequency Rad Hard DC-DC conversion ][ Rad Hard motor drives ] |
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Datasheet |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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May, 2022 |
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1.3 MB |
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