EPC7019 – Rad Hard Power Transistor

PublishTime：2022-08-04

●Rad Hard eGaN® transistors have been specifically designed for critical applications in the high reliability or commercial satellite space environments. GaN transistors offer superior reliability performance in a space environment because there are no minority carriers for single event, and as a wide band semiconductor there is less displacement for protons and neutrons, and additionally there is no oxide to breakdown.
●These devices have exceptionally high electron mobility and a low temperature coefficient resulting in very low R-DS(on) values. The lateral structure of the die provides for very low gate charge (Q-G) and extremely fast switching times. These features enable faster power supply switching frequencies resulting in higher power densities, higher efficiencies and more compact designs.
●EPC7019 eGaN® FETs are supplied only in passivated die form with solder bumps. Die size: 6.05 mm x 2.3 mm
■Features:
●Ultra high efficiency
●Ultra low Q-G
●Ultra small footprint
●Light weight
●Total dose
◆Rated > 1 Mrad
●Single event
◆SEE immunity for LET of 85 MeV/(mg/cm²) with V-DS up to 100% of rated breakdow
●Neutron
◆Maintains Pre-Rad specification for
up to 3 x 10¹⁵ Neutrons/cm²

Brand of Product：	EPC
Part#：	EPC7019 More Part#
Product Category：	Rad Hard Power Transistor 、 eGaN® FETs More
Application：	[ Commercial satellite EPS ][ avionics ][ Deep space probes ][ High frequency Rad Hard DC-DC conversion ][ Rad Hard motor drives ] More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：
Language：	English Chinese Chinese and English Japanese
Date of Creation：	May, 2022
Version Number：
Data Encoding：
Data Size：	1.3 MB

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