EPC7014 – Rad Hard Power Transistor VDS , 60 V RDS(on) , 340 mΩ ID , 4 A pulse 95% Pb / 5% Sn solder DATASHEET
●These devices have exceptionally high electron mobility and a low temperature coefficient resulting in very low RDS(on) values. The lateral structure of the die provides for very low gate charge (QG) and extremely fast switching times. These features enable faster power supply switching frequencies resulting in higher power densities, higher efficiencies and more compact designs.
●EPC7014 eGaN® FETs are supplied only in passivated die form with solder bumps
●Applications
■Commercial satellite EPS & avionics
■Deep space probes
■High frequency Rad Hard DC-DC conversion
■Rad Hard motor drives
●Features
■Ultra high efficiency
■Ultra low QG
■Ultra small footprint
■Light weight
■Total dose
▲Rated > 1 Mrad
■Single event
▲SEE immunity for LET of 85 MeV/(mg/cm² ) with VDS up to 100% of rated breakdown
■Neutron
▲Maintains Pre-Rad specification for up to 3 x 10¹⁵ Neutrons/cm²
Rad Hard Power Transistor 、 eGaN® FET 、 Rad Hard eGaN® transistors |
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[ Commercial satellite EPS ][ avionics ][ Deep space probes ][ Rad Hard motor drives ] |
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Datasheet |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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September, 2023 |
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1.4 MB |
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