EPC Releases Lowest On-resistance Rad-hard eGaN FET EPC7019 for Demanding Space Applications, 20 Times Smaller
EPC announces the introduction of the EPC7019 radiation-hardened eGaN FET. The EPC7019, a 40V, 1.5mΩ, 530A Pulsed, rad-hard eGaN FET in a small 13.9mm2 footprint. The EPC7019 has a total dose rating greater than 1 Mrad and SEE immunity for LET of 85MeV/(mg/cm2). These devices are offered in a chip-scale package, the same as the commercial eGaN FET and IC family. Packaged versions will be available from EPC Space.
The device has a figure of merit (RDS(on) x QG) that is 20 times superior to alternative rad hard silicon solutions and the size is 20 times smaller. With higher breakdown strength, lower gate charge, lower switching losses, better thermal conductivity, and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices and enable higher switching frequencies resulting in higher power densities, higher efficiencies, and more compact and lighter weight circuitry for critical spaceborne missions. Finally, GaN devices support higher total radiation level and SEE LET levels than silicon solutions.
Applications benefiting from the performance and fast deployment of the EPC7019 include power supplies for satellites and mission equipment and motor drives for robotics and instrumentation.
"EPC's GaN technology enables a new generation of power conversion and motor drives in space operating at higher frequencies, higher efficiencies, and greater power densities than ever achievable before" said Alex Lidow, CEO, and co-founder of EPC. "The EPC7019 offers designers a solution with a figure of merit that is 20 times better than best-in-class silicon rad hard devices. This is the lowest on-resistance for a rad hard transistor on the market today. And, the EPC7019 is significantly smaller and lower cost".
- 【Datasheet】EPC7019 – Rad Hard Power Transistor
- 【Datasheet】EPC7019 – Rad Hard Power Transistor
- 【Datasheet】EPC7019 – Rad Hard Power Transistor
- 【Datasheet】Enhancement-Mode Gallium Nitride Technology
- 【Datasheet】Enhancement-Mode Gallium Nitride Technology
- +1 Like
- Add to Favorites
Recommend
- GaN Transistors from EPC Bring Newest Rad Hard Technology to Demanding Space Applications
- Rad Hard GaN Transistors Offering Highest Density and Efficiency on the Market for Demanding Space Applications Available from EPC
- Rad Hard 100V GaN Transistor from EPC Offers Lowest On-Resistance Solution on the Market for Demanding Space Applications
- Sharge Selects GaN FETs EPC2218 from EPC for High-power USB PD Charger Retro 67 to Achieve the Most Efficient Power Conversion
- Sekorm Became an Authorized Distributor of EPC(Efficient Power Conversion), Which Brings GaN FET Products
- EPC Space Brings GaN to the Edge of the Atmospherem, and Rohm Hones In on GaN Miniaturization
- EPC Launches 40V Rad Hard GaN FETs That Set New Performance Standards for Demanding Space Applications
- 65A ePower™ Chipset from Efficient Power Conversion (EPC) Redefines Power Conversion
This document is provided by Sekorm Platform for VIP exclusive service. The copyright is owned by Sekorm. Without authorization, any medias, websites or individual are not allowed to reprint. When authorizing the reprint, the link of www.sekorm.com must be indicated.