GaN Transistors for Efficient Power Conversion
●Summary
■GaN transistors have the potential to replace silicon power MOSFETs in power conversion applications with a low-cost and higher efficiency solution
■eGaN FETs are straightforward to use, but care must be taken due to the higher switching speeds compared with power MOSFETs
■GaN transistors enable exciting new applications such as RF Envelope Tracking
Technical Documentation |
|
|
|
Please see the document for details |
|
|
|
|
|
|
|
English Chinese Chinese and English Japanese |
|
April 22-25,2013 |
|
|
|
|
|
5.7 MB |
- +1 Like
- Add to Favorites
Recommend
- EPC Space Brings GaN to the Edge of the Atmospherem, and Rohm Hones In on GaN Miniaturization
- How GaN is Revolutionizing Motor Drive Applications
- UMS GaN GH15-10 technology has successfully been space evaluated
- GaN Switching Frequency: Using Gallium Nitride Technology in Next-Generation High-Frequency Circuits
- NOVOSENSE launched driver IC Products NDi68515,NSD2621,NSG65N15K are Designed for GaN Applications
- LiDAR System Design of ToF Laser Driver with GaN Can Reach High Distances
- Efficient Energy Technology’s SolMate Adopts EPC GaN, Doubling Efficiency and Extending Product Lifetime
- From Principles to Examples: Why GaN?
All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.