GaN FETs Current Increase Due to Heavy Ion Testing Application Note

PublishTime：2020-12-17

Heavy ion single event testing of the Renesas 40V, 100V, and 200V GaN FETs showed that all three of the device types experienced an increase in IDSS current under certain conditions of VDSS and LET. Using the results of this testing and the appropriate parameters for a geosynchronous orbit in the single event simulation program CREME96, it was possible to show that the increase in current in a typical geosynchronous orbit would be inconsequential.

Brand of Product：	Renesas
Part#：	ISL70020SEH 、 ISL70023SEH 、 ISL70024SEH More Part#
Product Category：	Heavy ion single event More
Application：	More
Data Type：	Application note & Design Guide More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：
Language：	English Chinese Chinese and English Japanese
Date of Creation：	Mar.25.19
Version Number：	Rev.1.00
Data Encoding：	R34AN0001EU0100
Data Size：	313 KB

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