CFKQ65GR050 650V GaN FET

2025-03-20
CFKQ65GR050是一款650V的氮化镓场效应晶体管(GaN FET)。该器件具有高阈值栅极、无需负栅极驱动、高重复输入电压容限(±20V)等特点。它具有快速开关速度,以减少交叉损耗,低Qg和简单的栅极驱动,以在高频下实现最低的驱动器功耗。在所有SiC和GaN FET中,它具有关断状态下反向导通时的最低VF,适用于桥式 Totem-Pole (BTP)拓扑结构,适用于ICT和ESS,以及UPS和太阳能应用。

CF-Xpower

CFKQ65GR050

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氮化镓场效应晶体管 (GaN FET)

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ICT ]ESS ]UPS ]太阳能 ]

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TO-247-4L

English Chinese Chinese and English Japanese

Jan.2024

Rev 1.1

Doc: 1

1.2 MB

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