GaN Transistors for Efficient Power Conversion
●Summary
■eGaN FETs are easy to use but care must be taken due to the higher switching speeds compared with power MOSFETs
■eGaN FETs will replace silicon power MOSFETs in power conversion applications with a low-cost and higher efficiency solution
■Higher voltage devices and the integration of analog plus power will enhance the performance and cost-effectiveness of eGaN FETs
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Technical Documentation |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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2017/06/16 |
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1.5 MB |
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