EPC7018 – Rad Hard Power Transistor DATASHEET

2022-06-23
●EPC7018 eGaN® FETs are supplied only in passivated die form with solder bumps.
●Die size: 6.05 x 2.3 mm
●Features
■Ultra high efficiency
■Ultra low RDS(on),Q-G,Q-GD,Q-OSS, and 0 Q-RR
■Ultra small footprint
■Light weight
■Total dose
▲– Rated > 1 Mrad
■Single event
▲– SEE immunity for LET of 85 MeV/(mg/㎠) with V-DS up to 100% of rated breakdown
■Neutron
▲– Maintains Pre-Rad specification forup to 3 x 10¹⁵ Neutrons/㎠
●Benefits
■Superior radiation and electrical performance vs.rad hard MOSFETs:smaller,lighter,and greater radiation hardness

EPC

EPC7018

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Part#

Rad Hard Power Transistor

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Space Applications ]DC-DC power ]motor drives ]lidar ]ion thrusters ]Commercial satellite EPS ]avionics ]Deep space probes ]High frequency Rad Hard DC-DC conversion ]Rad Hard motor drives ]

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Datasheet

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April,2022

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