Footprint Compatible Packaged GaN Family Expands to 150V for Flexible Design of High-Power Density Applications
EPC introduces the 150V, 6 mΩ EPC2308 GaN FET, offering higher performance and smaller solution size for high power density applications including DC-DC conversion, AC/DC SMPS and chargers, solar optimizers and microinverters, and motor drives.
EPC, the world's leader in enhancement-mode gallium nitride (eGaN®) power FETs and ICs, expands the selection of off-the-shelf GaN FETs in thermally enhanced QFN packages with the introduction of the 150V EPC2308 designed for a motor drive in power tools and robots, high-density DC-DC from/to 80V-100V for industrial applications, synchronous rectification to 28V–54V for chargers, adaptors and power supplies, smartphones USB fast chargers, and in solar optimizers and microinverters.
The EPC2308 GaN FET offers a super small RDS(on), of just 4.9mOhm typical, together with very small QG, QGD, and QOSS parameters for low conduction and switching losses. The device features a thermally enhanced QFN package with a footprint of just 3mmx5mm, offering an extremely small solution size for the highest power density applications.
The package offers wettable flanks to simplify assembly and inspection and exposed top and ultra-low thermal resistances to optimize thermal dissipation through the heatsink for cooler operations.
The EPC2308 is footprint compatible with the previously released 100V, 1.8mOhm EPC2302, and the 100V, 3.8mOhm EPC2306.
"The EPC2308 combines the advantages of 150V GaN with an easy-to-assemble and thermally enhanced QFN package," said Alex Lidow, CEO and co-founder of EPC. "Designers can use our family of packaged GaN FETs to make smaller and lighter weight battery-operated BLDC motor drives for robotics and power tools, higher efficiency 80V input DC-DC converters, and higher efficiency USB chargers and power supply".
The EPC90148 development board is a half-bridge featuring EPC2308 GaN FET. It is designed for 150V maximum device voltage and 12A maximum output current. The purpose of this board is to simplify the evaluation process to speed time to market. This 2"x2" (50.8mmx50.8mm) board is designed for optimal switching performance and contains all critical components for easy evaluation.
- 【Datasheet】Enhancement-Mode Gallium Nitride Technology
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- 【Datasheet】EPC2308 – Enhancement Mode Power Transistor
- 【Datasheet】EPC2308 – Enhancement Mode Power Transistor DATASHEET
- 【Datasheet】EPC2308 – Enhancement Mode Power Transistor DATASHEET
- 【Datasheet】EPC2306 – Enhancement Mode Power Transistor eGaN® FET DATASHEET
- 【Datasheet】EPC2306 – Enhancement Mode Power Transistor DATASHEET
- 【Datasheet】EPC2306 – Enhancement Mode Power Transistor VDS , 100 V RDS(on) , 3.8 mΩ max DATASHEET
- 【Datasheet】EPC2306 – Enhancement Mode Power Transistor VDS , 100 V RDS(on) , 3.8 mΩ max DATASHEET
- 【Datasheet】EPC2306 – Enhancement Mode Power Transistor
- 【Datasheet】EPC2306 – Enhancement Mode Power Transistor DATASHEET
- 【Datasheet】EPC2306 – Enhancement Mode Power Transistor DATASHEET
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