EPC2308 – Enhancement Mode Power Transistor

PublishTime：2023-06-13

●Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.
●Benefits
■Higher Efficiency – Lower conduction and switching losses, zero reverse recovery losses
■Ultra Small Footprint – Higher power density
■Thermally enhanced QFN package with exposed top and ultra-low thermal resistances for cooler operations
■Wettable flanks and 0.6 mm between high voltage and low voltage pads to simplify assembly and inspection

Brand of Product：	EPC
Part#：	EPC2308 More Part#
Product Category：	Enhancement Mode Power Transistor 、 eGaN® FET More
Application：	[ chargers ][ adaptors ][ power supplies ][ Solar optimizers ][ Solar microinverters ][ battery-operated power tools ][ battery-operated power robots ][ USB fast chargers ][ Synchronous rectification ][ High density DC-DC ] More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：	QFN
Language：	English Chinese Chinese and English Japanese
Date of Creation：	March,2023
Version Number：
Data Encoding：
Data Size：	1.5 MB

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