EPC2308eGaN® FET DATASHEET
●Application Notes:
■Easy-to-use and reliable gate, Gate Drive ON = 5 V typical, OFF = 0 V (negative voltage not needed)
■Top of FET is electrically connected to source
●Benefits
■Higher Efficiency – Lower conduction and switching losses, zero reverse recovery losses
■Ultra Small Footprint – Higher power density
■Thermally enhanced QFN package with exposed top and ultra-low thermal resistances for cooler operations
■Wettable flanks and 0.6 mm between high voltage and low voltage pads to simplify assembly and inspection
[ High density DC-DC ][ AC/DC ][ chargers ][ adaptors ][ power supplies ][ Solar optimizers ][ microinverters ][ Motor drive ][ DC-DC ][ battery-operated power tools ][ robots ][ USB fast charger ] |
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Datasheet |
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Please see the document for details |
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QFN |
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English Chinese Chinese and English Japanese |
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December, 2022 |
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1.5 MB |
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