The 150V, 3mΩ EPC2305 and the 200V, 5mΩ EPC2304 GaN FETs offering higher performance and smaller solution size
EPC, the world’s leader in enhancement-mode gallium nitride FETs and ICs, introduces the 150V, 3mΩ EPC2305 and the 200V, 5mΩ EPC2304 GaN FETs in a thermally enhanced QFN package with exposed top and tiny 3mm x 5mm footprint.
These devices are the lowest on-resistance (RDS(on)) FETs in the market at 150V and 200V in a size that is fifteen times smaller than alternative Si MOSFETs. In addition to offering devices with half the on-resistance and fifteen times smaller, QG, QGD, QOSS are more than three times smaller than Si MOSFETs and the reverse recovery charge (QRR), is zero. These characteristics result in switching losses that are six times smaller in both hard switching and soft switching applications. The driver losses are three times less than silicon solutions and ringing and overshoot are both significantly reduced.
For sinusoidal BLDC motor drives, these devices enable<20ns deadtime and higher frequency to reduce noise, minimize size to allow for integration with the motor, reduce the input filter and eliminate the electrolytic capacitors, and increase motor + driver efficiency more than 8% by eliminating vibrations and distortions. This makes them ideal for forklift, escooter, eMobility, robots, and power tool motor drives.
For DC-DC conversion operating from 80V – 20V, the EPC2304 and EPC2305 enable higher switching frequency and up to five times higher density, and higher efficiency to simplify cooling.
These devices also provide higher efficiency, reduced size and weight, and robust reliability that are required for solar optimizers and microinverters.
The new devices are footprint compatible with the previously released 100V, 1.8mΩ EPC2302, the 100V, 3.8mΩ EPC2306, and the 150V 4.9mΩ EPC2308 for the maximum design flexibility.
The EPC2304 and EPC2305 expand our family of easy to assemble and thermally enhanced QFN packaged devices to 150V and 200V,” said Alex Lidow, EPC’s co-founder and CEO. “Designers can use this family of products for smaller and lighter weight BLDC motor drives, smaller and more efficient DC-DC converters, solar optimizers and microinverters, and higher power density USB chargers and power supplies. The footprint compatibility allows for optimization of performance and cost without redesigning the board.”
The EPC90140 development board is a half bridge featuring the EPC2304 GaN FET and the EPC90143 development board is a half bridge featuring the EPC2305 GaN FET. The purpose of these boards is to simplify the evaluation process and speed time to market. The 2” x 2” (50.8mmx50.8mm) boards are designed for optimal switching performance and contain all critical components for easy evaluation.
Price and Availability
The EPC2304 is priced at $5.25 each in 1 Ku volumes and the EPC2305 is priced at $4.95 each in 1 Ku volumes. The EPC90140 and EPC90143 development boards are priced at $200.00 each. Designers interested in replacing their silicon MOSFETs with a GaN solution can use the EPC GaN Power Bench’s cross-reference tool to find a suggested replacement based on their unique operating conditions.
- 【Datasheet】EPC2305 – Enhancement Mode Power Transistor VDS , 150 V RDS(on) , 2.2 mΩ typ DATASHEET
- 【Datasheet】EPC2305 – Enhancement Mode Power Transistor DATASHEET
- 【Datasheet】EPC2305 – Enhancement Mode Power Transistor DATASHEET
- 【Datasheet】EPC2305 – Enhancement Mode Power Transistor DATASHEET
- 【Datasheet】EPC2305 – Enhancement Mode Power Transistor, VDS 150V, RDS(on) 2.2 mΩ typ
- 【Datasheet】EPC2305 – Enhancement Mode Power Transistor
- 【Datasheet】EPC2305 – Enhancement Mode Power Transistor eGaN® FET DATASHEET
- 【Datasheet】EPC2304 – Enhancement Mode Power Transistor DATASHEET
- 【Datasheet】EPC2304 – Enhancement Mode Power Transistor
- 【Datasheet】EPC2304 – Enhancement Mode Power Transistor eGaN® FET DATASHEET
- 【Datasheet】EPC2308eGaN® FET DATASHEET
- +1 Like
- Add to Favorites
Recommend
- 200V, 10mΩ GaN FET EPC2307 Joins Family of Footprint Compatible QFN Packaged Devices for High Efficiency and Design Flexibility
- EPC‘s 100V, 35A eGaN IC EPC23102 Boosts Power Density and Simplifies Design
- EPC23102 ePower™ Stage GaN IC Shrink Motor Drives and Speed Time-to-Market for eMobility, Power Tools, Robotics, and Drones
- Sharge Selects GaN FETs EPC2218 from EPC for High-power USB PD Charger Retro 67 to Achieve the Most Efficient Power Conversion
- 65A ePower™ Chipset from Efficient Power Conversion (EPC) Redefines Power Conversion
- EPC GaN ICs Simplify Motor Joint Inverter Design for Humanoid Robots
- EPC Announced the First GaN FET with 1 Milliohms On-Resistance, Offering Double Power Density
- Design High-Performance Class-D Audio Amplifiers with EPC’s New Reference Design EPC9192 and eGaN FETs
This document is provided by Sekorm Platform for VIP exclusive service. The copyright is owned by Sekorm. Without authorization, any medias, websites or individual are not allowed to reprint. When authorizing the reprint, the link of www.sekorm.com must be indicated.