EPC2305 – Enhancement Mode Power Transistor DATASHEET
■The EPC2305 is a 150 V eGaN® power transistor in a low inductance 3 x 5 mm QFN package with exposed top for excellent thermal management.
■The thermal resistance to case top is ~0.2 ℃/W, resulting in excellent thermal behavior and easy cooling. The device features an enhanced PQFN “Thermal-Max” package. The exposed top enhances top-side thermal management and the side-wettable flanks guarantee that the complete side-pad surface is wetted with solder during the reflow soldering process, which protects the copper and allows soldering to occur on this external flank area for easy optical inspection.
■Compared to a Si MOSFET, the footprint of 15 mm² is less than half of the size of the best-in-class Si MOSFET with similar RDS(on) and voltage rating, QG and QGD are significantly smaller and QRR is 0.
■This results in lower switching losses and lower gate driver losses. In summary, EPC2305 allows the highest power density due to enhanced efficiency, smaller size, and higher switching frequency for smaller inductor and fewer capacitors.
■The EPC2305 enables designers to improve efficiency and save space. The excellent thermal behavior enables easier and lower cost cooling. The ultra-low capacitance and zero reverse recovery of the eGaN® FET enables efficient operation in many topologies. Performance is further enhanced due to the small, low inductance footprint.
●Features
■ 150 V
■ 2.2 mΩ typical
■ 3 x 5 mm QFN Package
●Benefits
■Ultra High Efficiency
■ No Reverse Recovery
■ Ultra Low QG
■ Small Footprint
■Excellent Thermal
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Enhancement Mode Power Transistor 、 eGaN® FET 、 eGaN® power transistor |
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[ AC/DC Chargers ][ Adaptors ][ BLDC Motor Drive ][ eMobility Motor drives ][ Solar Optimizer ][ MPPT ][ chargers ][ power supplies ][ Class D Audio ][ phone ][ notebook ][ gaming PC ][ eMobility ][ power tools ][ vacuum cleaners ] |
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Datasheet |
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Please see the document for details |
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QFN;PQFN |
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English Chinese Chinese and English Japanese |
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April 2024 |
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2.2 MB |
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