EPC eGaN® FET Qualification Report EPC2305

2024-10-24
■The testing matrix in this qualification report covers the qualification of EPC2305, a 150 V eGaN power transistor in a QFN package with exposed silicon on top for low thermal resistance from junction to top-side heatsink.
■Scope
●The testing matrix in this qualification report covers the qualification of EPC2305, a 150 V eGaN power transistor

EPC

EPC2305

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eGaN® FETeGaN power transistor

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Test Report

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QFN

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2024/8/1

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