EPC2302 EPC eGaN® FET Qualification Report
◆Scope
■The testing matrix in this qualification report covers the qualifica-tion of EPC2302, a 100 V eGaN power transistor in a QFN package with exposed top.
◆Qualification Test Overview
■EPC’s eGaN FETs were subjected to a wide variety of stress tests under conditions that are typical for silicon-based power MOSFETs. These tests included:
●High temperature reverse bias (HTRB): Parts are subjected to a drain-source voltage at the maximum rated temperature
●High temperature gate bias (HTGB): Parts are subjected to a gate-source voltage at the maximum rated temperature
●High temperature storage (HTS): Parts are subjected to heat at the maximum rated temperature
●Temperature cycling (TC): Parts are subjected to alternating high and low temperature extremes
●High temperature high humidity reverse bias (H3TRB): Parts are subjected to humidity under high temperature with a drain-source voltage applied
●Moisture sensitivity level (MSL): Parts are subjected to moisture, temperature, and three cycles of reflow
●Unbiased highly accelerated stress test (uHAST): Parts are subjected to extreme temperature and humidity for a length of time.
● Electrostatic Discharge (ESD) Characterization: Parts are tested under both Human Body Model (HBM) and Charged Device Model (CDM) to assess device susceptibility to electrostatic discharge events.
■The stability of the devices is verified with DC electrical tests after stress biasing. The electrical parameters are measured at time-zero and at interim readout points at room temperature. Electrical parameters such as the gate-source leakage, drain-source leakage, gate-source threshold voltage, and on-state resistance are compared against the data sheet specifications. A failure is recorded when a part exceeds the datasheet specifications. eGaN FETs are stressed to meet the latest Joint Electron Device Engineering Council (JEDEC) standards when possible.
■Parts for all tests except for TC were mounted onto high Tg FR4 adaptor cards. Adaptor cards of 1.6 mm in thickness with two copper layers were used. The top copper layer was 1 oz. or 2 oz., and the bottom copper layer was 1 oz. Kester NXG1 type 3 SAC305 solder with no clean flux was used for mounting the parts onto an adaptor card.
|
|
|
|
Test Report |
|
|
|
|
Please see the document for details |
|
|
|
|
|
|
|
|
QFN |
|
|
English Chinese Chinese and English Japanese |
|
|
2022/10/18 |
|
|
|
|
|
|
|
|
177 KB |
- +1 Like
- Add to Favorites
Recommend
- The 150V, 3mΩ EPC2305 and the 200V, 5mΩ EPC2304 GaN FETs offering higher performance and smaller solution size
- 200V, 10mΩ GaN FET EPC2307 Joins Family of Footprint Compatible QFN Packaged Devices for High Efficiency and Design Flexibility
- EPC‘s 100V, 35A eGaN IC EPC23102 Boosts Power Density and Simplifies Design
- EPC23102 ePower™ Stage GaN IC Shrink Motor Drives and Speed Time-to-Market for eMobility, Power Tools, Robotics, and Drones
- EPC‘s New EPC9165 Bidirectional Converter that Delivers 2kW with 96.8% Peak Efficiency
- Sharge Selects GaN FETs EPC2218 from EPC for High-power USB PD Charger Retro 67 to Achieve the Most Efficient Power Conversion
- Bidirectional Converter with Regulated Output Voltage Reference Design Board featuring ePower™ Chipset launched by EPC
- 65A ePower™ Chipset from Efficient Power Conversion (EPC) Redefines Power Conversion
All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.
Integrated Circuits
Discrete Components
Connectors & Structural Components
Assembly UnitModules & Accessories
Power Supplies & Power Modules
Electronic Materials
Instrumentation & Test Kit
Electrical Tools & Materials
Mechatronics
Processing & Customization
