QUALIFICATION REPORT
EPC Reliability & Quality
EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2022 | | 1
EPC eGaN® FET
Qualication Report
EPC2302
EFFICIENT POWER CONVERSION
This report summarizes the Product Qualication results for EPC
part number EPC2302 which meets all required qualication
requirements and is released for production.
Qualication Test Overview
EPC’s eGaN FETs were subjected to a wide variety of stress tests under
conditions that are typical for silicon-based power MOSFETs. These
tests included:
– High temperature reverse bias (HTRB): Parts are subjected to a drain-
source voltage at the maximum rated temperature
– High temperature gate bias (HTGB): Parts are subjected to a gate-
source voltage at the maximum rated temperature
– High temperature storage (HTS): Parts are subjected to heat at the
maximum rated temperature
– Temperature cycling (TC): Parts are subjected to alternating high-
and low temperature extremes
– High temperature high humidity reverse bias (H3TRB): Parts are
subjected to humidity under high temperature with a drain-source
voltage applied
– Moisture sensitivity level (MSL): Parts are subjected to moisture,
temperature, and three cycles of reow
– Unbiased highly accelerated stress test (uHAST): Parts are subjected
to extreme temperature and humidity for a length of time.
– Electrostatic Discharge (ESD) Characterization: Parts are tested
under both Human Body Model (HBM) and Charged Device Model
(CDM) to assess device susceptibility to electrostatic discharge
events.
The stability of the devices is veried with DC electrical tests after stress
biasing. The electrical parameters are measured at time-zero and at
interim readout points at room temperature. Electrical parameters such
as the gate-source leakage, drain-source leakage, gate-source threshold
voltage, and on-state resistance are compared against the data sheet
specications. A failure is recorded when a part exceeds the datasheet
specications. eGaN FETs are stressed to meet the latest Joint Electron
Device Engineering Council (JEDEC) standards when possible.
Parts for all tests except for TC were mounted onto high Tg FR4 adaptor
cards. Adaptor cards of 1.6 mm in thickness with two copper layers were
used. The top copper layer was 1 oz. or 2 oz., and the bottom copper
layer was 1 oz. Kester NXG1 type 3 SAC305 solder with no clean ux was
used for mounting the parts onto an adaptor card.
Scope
The testing matrix in this qualication report covers the qualica-
tion of EPC2302, a 100 V eGaN power transistor in a QFN package
with exposed top.
Part Number
Voltage
(V)
Max R
DS(on)
(mΩ)
Package Size
(mm x mm)
EPC2302 100 1.8 3 x 5
Dr. Shengke Zhang, VP of Reliability, Efficient Power Conversion Corporation
QUALIFICATION REPORT
EPC Reliability & Quality
EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2022 | | 2
High Temperature Gate Bias
Parts from three lots were subjected to 6 V gate-source bias at the maximum rated temperature for a stress period of 1000 hours.
High Temperature Storage
Parts from three lots were subjected to heat at the maximum rated temperature.
Temperature Cycling
Parts from three lots were loaded into trays and subjected to temperature cycling between -40°C and +125°C, with dwell times of 10 minutes and
2 cycles/hour in accordance with the JEDEC Standard JESD22A104.
Table 2. High Temperature Gate Bias Test
Table 3. High Temperature Storage Test
Table 5. Temperature Cycling Test
Stress Test Part Number
Voltage
(V)
Die Size
(mm x mm)
Test Condition # of Failure
Sample Size
(unit x lot)
Duration
(Hrs)
HTGB
EPC2302
100 3 x 5 T = 150°C, V
GS
= 6 V 0 77 x 3 1000
Stress Test Part Number
Voltage
(V)
Die Size
(mm x mm)
Test Condition # of Failure
Sample Size
(unit x lot)
Duration
(Hrs)
HTS
EPC2302
100 3 x 5 T = 150°C, Air 0 77 x 3 1000
Stress Test Part Number
Voltage
(V)
Die Size
(mm x mm)
Test Condition # of Failure
Sample Size
(unit x lot)
Duration
(Cys)
TC
EPC2302
100 3 x 5 -40 to +125°C, Air 0 77 x 3 850
High Temperature Reverse Bias
Parts from three lots were subjected to 80% of the rated drain-source voltage at the maximum rated temperature for a stress period of 1000 hours.
Table 1. High Temperature Reverse Bias Test
Stress Test Part Number
Voltage
(V)
Die Size
(mm x mm)
Test Condition # of Failure
Sample Size
(unit x lot)
Duration
(Hrs)
HTRB
EPC2302
100 3 x 5 T=150°C, V
DS
= 80 V 0 77 x 3 1000
Stress Test Part Number
Voltage
(V)
Die Size
(mm x mm)
Test Condition # of Failure
Sample Size
(unit x lot)
Duration
(Hrs)
MSL2
EPC2302
100 3 x 5 T=85°C, RH = 60%, 3 reow cyc 0 231 x 3 168
Moisture Sensitivity Level
Parts from three lots were subjected to 60% RH at 85°C for a stress period of 168 hours (as dened by J-STD-020E for MSL2 products). The parts
were also subjected to three cycles of Pb-free reow in accordance with the IPC/JEDEC joint Standard J-STD-020.
Table 4. Moisture Sensitivity Level Test