EPC2306 – Enhancement Mode Power Transistor DATASHEET

2023-11-23
●Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.
●Benefits
■Higher Efficiency – Lower conduction and switching losses, zero reverse recovery losses
■ Ultra Small Footprint – Higher power density

EPC

EPC2306

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Part#

Enhancement Mode Power TransistoreGaN® FET

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AC-DC chargers ]SMPS ]adaptors ]power supplies ]Motor Drives ]High Power Density DC-DC modules ]Solar MPPT ]

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Datasheet

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October, 2023

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