Expanded Family of Packaged GaN FETs Offers Footprint Compatible Solutions to Optimize Performance vs. Cost While Increasing Power Density and Improving Thermal Performance
EPC, the world's leader in enhancement-mode gallium nitride (eGaN®) power FETs and ICs, expands the selection of off-the-shelf GaN FETs in thermally enhanced QFN packages with the introduction of the 100V EPC2306 designed for 48V DC-DC conversion used in high-density computing applications, in 48V BLDC motor drives for e-mobility and robotics, and in solar optimizers and microinverters, and Class D Audio.
The EPC2306 GaN FET offers a super small RDS(on), of just 3.8mOhm, together with very small QG, QGD, and QOSS parameters for low conduction and switching losses. The device features a thermally enhanced QFN package with an exposed top and footprint of just 3mm x 5mm, offering an extremely small solution size for the highest power density applications.
The EPC2306 is footprint compatible with the previously released 100V, 1.8mOhm EPC2302. The two footprint compatible devices allow designers to trade off RDS(on) vs. price to optimize solutions for efficiency or cost by dropping in a different part number in the same PCB footprint.
"The EPC2306 combines the advantages of 100V GaN with an easy-to-assemble QFN package without sacrificing performance," said Alex Lidow, CEO and co-founder of EPC. "Designers can use our family of packaged GaN FETs to make lighter weight battery-operated BLDC motor drives for eMobility and drones, higher efficiency 48V input DC-DC converters for data center, datacom, artificial intelligence, and other industrial and consumer applications."
The EPC90145 development board is a 100V maximum device voltage, 45A maximum output current, and half-bridge featuring EPC2306 GaN FET. The purpose of this board is to simplify the evaluation process to speed time to market. This 2" x 2" (50.8mm x 50.8mm) board is designed for optimal switching performance and contains all critical components for easy evaluation.
- 【Datasheet】Enhancement-Mode Gallium Nitride Technology
- 【Datasheet】EPC2306 – Enhancement Mode Power Transistor eGaN® FET DATASHEET
- 【Datasheet】EPC2306 – Enhancement Mode Power Transistor DATASHEET
- 【Datasheet】EPC2306 – Enhancement Mode Power Transistor VDS , 100 V RDS(on) , 3.8 mΩ max DATASHEET
- 【Datasheet】EPC2306 – Enhancement Mode Power Transistor VDS , 100 V RDS(on) , 3.8 mΩ max DATASHEET
- 【Datasheet】EPC2306 – Enhancement Mode Power Transistor
- 【Datasheet】EPC2306 – Enhancement Mode Power Transistor DATASHEET
- 【Datasheet】EPC2306 – Enhancement Mode Power Transistor DATASHEET
- 【Datasheet】EPC2302 – Enhancement Mode Power Transistor DATASHEET
- 【Datasheet】EPC2302 – Enhancement Mode Power Transistor DATASHEET
- 【Datasheet】EPC2302 – Enhancement Mode Power Transistor VDS , 100 V RDS(on) , 1.8 mΩ max DATASHEET
- 【Datasheet】EPC2302 – Enhancement Mode Power Transistor VDS , 100 V RDS(on) , 1.8 mΩ max DATASHEET
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