EPC‘s 50W,12~60V eGaN FET-based Boost Converter Provides an Efficient, Low-cost Solution for Laptop and PC Monitor Backlighting
A 50W, 12V to 60V eGaN® FET-based synchronous boost converter achieves 95.3% peak efficiency with low temperature rise with a simple, low-cost topology.
EL SEGUNDO, Calif.— October, 2021 — EPC announces the availability of the EPC9162, a bi-directional buck or reverse-boost converter. This demonstration board features the 100V EPC2052 for the synchronous converter, and the EPC2038 in the synchronous bootstrap FET circuit.
The EPC9162 is by default programmed as a boost converter operating at 12V input to 60V/50W output. However, the board can also be operated as a buck converter at 48V input to 12V/60 W output. The fast-switching speed of eGaN FETs significantly reduces switching losses for higher efficiency operation. To make it simple for a power supply designer to easily replicate this design, all supporting materials for this board including schematic, bills of materials, and Gerber files are available on the EPC website.
The peak efficiency from 12V to 60V/0.85 A is 95.3% and the light load efficiency is 86% with only a 40°C temperature rise despite the small size of the eGaN FETs.
“In applications where light-load efficiency is critical, such as LED backlighting for laptops and monitors, the low switching losses of eGaN FETs provide high efficiency with very low temperature rise to prevent equipment overheating,” said Alex Lidow, CEO of EPC. “The synchronous boost topology is a simple, low-cost solution for power system designers.”
About EPC
EPC is the leader in enhancement mode gallium nitride (eGaN®) based power management. eGaN FETs and integrated circuits provide performance many times greater than the best silicon power MOSFETs in applications such as DC-DC converters, remote sensing technology (lidar), motor drives for eMobility, robotics, and drones, and low-cost satellites.
- 【Datasheet】Enhancement-Mode Gallium Nitride Technology
- 【Datasheet】Enhancement-Mode Gallium Nitride Technology
- 【Datasheet】Enhancement-Mode Gallium Nitride Technology
- 【Datasheet】EPC2038 – Enhancement Mode Power Transistor with Integrated Reverse Gate Clamp Diode
- 【Datasheet】EPC2038 – Enhancement Mode Power Transistor with Integrated Reverse Gate Clamp Diode DATA SHEET
- 【Datasheet】EPC2052 – Enhancement Mode Power Transistor DATASHEET
- 【Datasheet】EPC2052 – Enhancement Mode Power Transistor DATA SHEET
- 【Datasheet】Extreme GaN – What Happens When eGaN® FETs are Exposed to Voltage and Current Levels Well Above Data Sheet Limits
- +1 Like
- Add to Favorites
Recommend
- Sharge Selects GaN FETs EPC2218 from EPC for High-power USB PD Charger Retro 67 to Achieve the Most Efficient Power Conversion
- Efficient Power Conversion (EPC) Expands 100 V eGaN FET Family Offering Designers Best-in-Class Performance and Cost for 48 V DC-DC Conversion
- EPC Introduces The 40 V, 1.6 Milliohm EPC2069 EGaN® FET, it Can Range From 500 W to 2 KW and Exceed 98% Efficiency
- EPC Announces a New 3-phase BLDC Motor Drive Inverter Using the EPC2065 EGaN® FET
- EPC Launches 40V EPC2055 eGaN FET Ideal for High Power Density Solutions for USB-C Battery Chargers and Ultra-thin Point-of-Load Converters
- New Automotive Qualified GaN FETs EPC2204A and EPC2218A for Vehicle Electronics and Advanced Autonomy from EPC
- Design Higher Resolution Lidar Systems with New Automotive-Qualified GaN FET EPC2252 for Advanced Autonomy from EPC
- 65A ePower™ Chipset from Efficient Power Conversion (EPC) Redefines Power Conversion
This document is provided by Sekorm Platform for VIP exclusive service. The copyright is owned by Sekorm. Without authorization, any medias, websites or individual are not allowed to reprint. When authorizing the reprint, the link of www.sekorm.com must be indicated.
Integrated Circuits
Discrete Components
Connectors & Structural Components
Assembly UnitModules & Accessories
Power Supplies & Power Modules
Electronic Materials
Instrumentation & Test Kit
Electrical Tools & Materials
Mechatronics
Processing & Customization
