EPC2070 – Enhancement Mode Power Transistor

2021-12-29
●eGaN® FETs are supplied in passivated die form with copper pillars.Die size: 1.3 x 0.85 mm
■Applications
▲High Frequency DC-DC from 48 V–60 V input
▲ToF module using Vcsel laser for camera modules, laptops and smart phones
▲Open Rack Server Architectures
▲Lidar/Pulsed Power Applications
▲Power Supplies
▲Class D Audio
▲LED Lighting
▲Low Inductance Motor Drive
■Benefits
▲Ultra High Efficiency
▲No Reverse Recovery
▲Ultra Low QG
▲Ultra Small Footprint

EPC

EPC2070

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Part#

Enhancement Mode Power TransistoreGaN® FETs

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High Frequency DC-DC ]ToF module ]camera modules ]laptops ]smart phones ]Lidar ]Pulsed Power ]Power Supplies ]Class D Audio ]LED Lighting ]

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Datasheet

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Please see the document for details

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2021/11/17

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