EPC eGaN® FET Qualification Report EPC2070
■High temperature reverse bias (HTRB): Parts are subjected to a drain-source voltage at the maximum rated temperature
■High temperature gate bias (HTGB): Parts are subjected to a gate-source voltage at the maximum rated temperature
■High temperature storage (HTS): Parts are subjected to heat at the maximum rated temperature
■Temperature cycling (TC): Parts are subjected to alternating high- and low temperature extremes
■High temperature high humidity reverse bias (H3TRB): Parts are subjected to humidity under high temperature with a drain-source voltage applied
■Moisture sensitivity level (MSL): Parts are subjected to moisture, temperature, and three cycles of reflow
■Electrostatic discharge (ESD) characterization: Parts are tested under Human Body Model (HBM) to assess device susceptibility to electrostatic discharge events
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Test Report |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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2021/11/25 |
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190 KB |
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