EPC eGaN® FET Qualification Report EPC2070

PublishTime：2021-12-29

●EPC's eGaN FETs were subjected to a wide variety of stress tests under conditions that are typical for silicon-based power MOSFETs. These tests included:
■High temperature reverse bias (HTRB): Parts are subjected to a drain-source voltage at the maximum rated temperature
■High temperature gate bias (HTGB): Parts are subjected to a gate-source voltage at the maximum rated temperature
■High temperature storage (HTS): Parts are subjected to heat at the maximum rated temperature
■Temperature cycling (TC): Parts are subjected to alternating high- and low temperature extremes
■High temperature high humidity reverse bias (H3TRB): Parts are subjected to humidity under high temperature with a drain-source voltage applied
■Moisture sensitivity level (MSL): Parts are subjected to moisture, temperature, and three cycles of reflow
■Electrostatic discharge (ESD) characterization: Parts are tested under Human Body Model (HBM) to assess device susceptibility to electrostatic discharge events

Brand of Product：	EPC
Part#：	EPC2070 、 EPC2051 、 EPC2204 、 EPC2218 More Part#
Product Category：	eGaN® FET More
Application：	More
Data Type：	Test Report More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：
Language：	English Chinese Chinese and English Japanese
Date of Creation：	2021/11/25
Version Number：
Data Encoding：
Data Size：	190 KB

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