EPC2071 – Enhancement Mode Power Transistor

2023-06-13
●Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.
●Benefits
■Ultra High Efficiency
■ No Reverse Recovery
■ Ultra Low QG ,QGD ,QOSS
■ Ultra Low RDS(on)
■ Ultra Small Footprint

EPC

EPC2071

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Part#

Enhancement Mode Power TransistoreGaN® FETeGaN® FETsGaN transistors

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DC-DC Converters ]BLDC Motor Drives ]Point of Load Converters ]Solar Converters ]Lidar ]eMobility ]Sync Rectification ]

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Datasheet

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English Chinese Chinese and English Japanese

March, 2023

2.3 MB

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