TitanKlean® W Tungsten compatible post-etch residue and hard mask removal solutions

2022-10-21
●As pattern geometries become increasingly smaller and more complex, removing the metal hard mask during the post-etch residue removal process becomes more desirable. The major roadblock to implementing this step previously has been the incompatibility of potential mask removal chemistries with other materials that are present. In some cases, these materials are very similar to the hard mask material itself, adding complexity to an already difficult challenge. TitanKlean® W was designed to enable this step while also delivering significant cost savings.
●TitanKlean W formulated solutions provide one-step, hard mask removal and post-etch clean and are compatible with W metallization and exposed thin films materials. By reducing effective aspect ratio, these solutions simplify subsequent copper deposition processes resulting in significant improve-ments in electromigration and time dependent dielectric breakdown (TDDB) performance.

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2017/9/14

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