ST75N75 N Channel Enhancement Mode MOSFE
●Features:
■75V/40.0A, RDS(ON) = 8mΩ (Typ.) @VGS = 10V
■Super high density cell design for extremely low RDS(ON)
■Exceptional on-resistance and maximum DC current capability
■TO-220 package design
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Datasheet |
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Please see the document for details |
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TO-220;TO220-3L |
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English Chinese Chinese and English Japanese |
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2013/7/2 |
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V1 |
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674 KB |
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