STN80T08 N Channel Enhancement Mode MOSFET
●Features:
■80V/40.0A, RDS(ON) = 8mΩ (Typ.) @VGS = 10V
■Super high density cell design for extremely low RDS(ON)
■Exceptional on-resistance and maximum DC current capability
■TO-220 package design
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Datasheet |
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Please see the document for details |
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TO-220;TO220-3L |
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English Chinese Chinese and English Japanese |
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2013/6/21 |
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V1 |
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932 KB |
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