ST36N06 N Channel Enhancement Mode MOSFET

PublishTime：2022-10-14

●ST36N06 is used trench technology to provide excellent RDS(on) and gate charge. Those devices are suitable for use as load switch or in PWM applications.
●Features:
■60V/20.0A, RDS(ON) = 30mΩ (Typ.) @VGS = 10V
■60V/20.0A, RDS(ON) = 45mΩ @VGS = 4.5V
■Super high density cell design for extremely low RDS(ON)
■Exceptional on-resistance and maximum DC current capability
■TO-220 package design

Brand of Product：	Stanson
Part#：	ST36N06 More Part#
Product Category：	N Channel Enhancement Mode MOSFET More
Application：	More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：	TO-220;TO220-3L
Language：	English Chinese Chinese and English Japanese
Date of Creation：	2011/3/31
Version Number：	V1
Data Encoding：
Data Size：	497 KB

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