SOT-23 P-channel MOS BSS84 : Cost Effective Solutions for Low-voltage Applications Requiring a Low-current High-side Switch
Today, we will introduce the Low-Voltage P-channel MOS BSS84 from SLKOR, a P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) package using Trench MOSFET technology. It is an ideal choice for mobile devices, power management, LED lighting, etc.
Fig.1
Introductions:
MOS, short for MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), is a type of semiconductor device composed of metal, oxide, and semiconductor layers. Its working principle is based on the channel effect of electric charge on the gate metal layer between two semiconductor layers separated by an oxide layer. By controlling the electric field on the metal electrode, the charge distribution in the semiconductor is controlled. It has the advantages of low-voltage drive, low power consumption, high-speed switching, and high input impedance, and is widely used in electronic circuits.
Challenges:
High-performance low-voltage MOS devices must feature low on-resistance, low threshold voltage, good temperature characteristics, and a high-density process. The lower the on-resistance, the stronger the conduction ability. The performance of low-voltage MOS changes with temperature. At high temperatures, its conduction ability will decrease, but the leakage current will increase, leading to bad performance of the MOS.
Solutions:
This SOT-23 P-channel MOS BSS84 from Slkor has a drain-source voltage of -50V and a continuous drain current of -130mA, with a power rating of 200mW. Its on-resistance is 10Ω@5V, 100mA, its turn on threshold voltage is -2.5V@250μA, and the input capacitance is 73pF@25V. The BSS84 can be used, with a minimum of effort, in most applications requiring up to 0.13 A DC and can deliver current up to 0.52A. This product is particularly suited to low-voltage applications requiring a low-current high-side switch.
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