STN444DN N Channel Enhancement Mode MOSFET
●Features:
■30V/30A, RDS(ON) = 2.6mΩ（Typ.）@VGS= 10V
■30V/15A, RDS(ON) = 3.4mΩ@VGS= 4.5V
■Super high density cell design for extremely low RDS(ON)
■Exceptional on-resistance and maximum DC current capability
■PowerPAK 5x6L(1212-8)package design
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Datasheet |
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Please see the document for details |
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PowerPAK |
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English Chinese Chinese and English Japanese |
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2016/11/15 |
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V1 |
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807 KB |
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